Datasheet Details
| Part number | HM80N70 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 773.94 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | HM80N70-HMSemiconductor.pdf |
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Overview: +01 80VDS／±25VGS／66A(ID) N-Channel Enha ncement Mode MOSFET.
| Part number | HM80N70 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 773.94 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet | HM80N70-HMSemiconductor.pdf |
|
|
|
HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi.
Tape width - Quantity - +01 80VDS／±25VGS／66A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID IDP IS TJ TSTG Drain-Source Voltage Gate –Source Voltage Parameter Continuous Drain Current 300us Pulsed Drain Current Tested Diode Continuous Forward Current Operating Junction Temperature Storage Temperature Range TC=100°C TC=25°C Typical Unit 80 V ±25 V 46 A 66 A 240 A 66 A 175 °C -55 ~ 175 °C Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA IDSS VGS(th) Zero Gate Voltage Drain Current VDS=64V,VGS=0V TJ=85°C Gate Threshold Voltage VDS=VGS,ID=-250uA IGSS Gate Leakage Current RDS(on)1 Drain-Source On-Resistance VGS=±25V, VDS=0V VGS=10V, ID=30A Diode Characteristics VSD1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance ISD=20A,VGS=0V ISD=30A, dISD/dt=100A/us VGS=0V, VDS=0V, Frequency=1MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=40V Frequency=1MHz td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Tu
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