HM80N70 Description
pulse width ≦ 300ns, duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. +01 80VDS／±25VGS／66A(ID) N-Channel Enha ncement Mode MOSFET Typical Characteristics Page 3 Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi.
HM80N70 Key Features
- VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max.)@VGS=10V
- Reliab le and Rugged -Advancedtrench process technology -HighDensity Cell Design For Ultra Low On
HM80N70 Applications
- Synchronous Rectification - Power Management in Inverter System