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HM80N70 - N-Channel Enhancement Mode Power MOSFET

General Description

  HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size  -   Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Tape width - Quantity - +01 80VDS／±25

Key Features

  • VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max. )@VGS=10V.
  • Reliab le and Rugged.
  • Advancedtrench process technology.
  • HighDensity Cell Design For Ultra Low On-Resistance .

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+01 80VDS／±25VGS／66A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max.)@VGS=10V  Reliab le and Rugged Advancedtrench process technology HighDensity Cell Design For Ultra Low On-Resistance  Applications  Synchronous Rectification  Power Management in Inverter System  Switching Time Test Circuit and Waveforms Pin Description   HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size  -   Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.