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HM80N04K Key Features

  • VDS =40V,ID =80A
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load Switching
  • Tape width
  • Quantity

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HM80N04K Description

The HM80N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.