HM840 Key Features
- 9.0A, 500V, RDS(on) = 0.85Ω @VGS = 10 V
- Low gate charge ( typical 30nC)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: HM840
- Manufacturer: H&M Semiconductor (official site)
- Size: 297.89 KB
Related H&M Semiconductor Datasheets
| Part Number | Description |
|---|---|
| HM840F | 500V N-Channel MOSFET |
| HM8002D | mono class AB audio power amplifier |
| HM803 | Low-Power Microprocessor Power Monitoring and Reset Circuit |
| HM809 | Low-Power Microprocessor Power Monitoring and Reset Circuit |
| HM80N03 | N-Channel Enhancement Mode Power MOSFET |
HM840 Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge...