HM840 - 500V N-Channel MOSFET

Product Overview

H&M Semiconductor

Part number	HM840
Manufacturer	H&M Semiconductor
File Size	297.89 KB
Description	500V N-Channel MOSFET
Datasheet	HM840 Datasheet
Additional preview pages of the HM840 datasheet.

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

9.0A, 500V, RDS(on) = 0.85Ω @VGS = 10 V.
Low gate charge ( typical 30nC).
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

📁 Similar Datasheet

HM80N03K - N-Channel Power MOSFET (H&M semi)
HM810 - Ultra-compact high-power electromagnetic relay (Hongfa Technology)
HM8202 - Standalone Li-Ion Switch Mode Battery Charger (H&M semi)
HM82C11 - Printer Adapter Interface (HMC)
HM8348 - Mouse Controller (HMC)
HM86171 - Color Pallete RAMDAC (HMC)
HM879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM879 - SILICON PNP EPITAXIAL TYPE TRANSISTOR (GME)

Other Datasheets by H&M Semiconductor

Published: Aug 12, 2025 |