HM9N50I Datasheet 500v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM9N50K/HM9N50I HM9N50K/HM9N50I 500V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HM9N50I
Manufacturer	H&M Semiconductor
File Size	703.89 KB
Description	500V N-Channel MOSFET
Datasheet	HM9N50I HM9N50K Datasheet (PDF)

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology.

Key Features

9A, 500V, RDS(on) = 0.95Ω @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D.
TO-252 TO-251 ◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Volt.

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