HM9N50I - 500V N-Channel MOSFET

This page provides the datasheet information for the HM9N50I, a member of the HM9N50K 500V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM9N50I
Manufacturer	H&M Semiconductor
File Size	703.89 KB
Description	500V N-Channel MOSFET
Datasheet	HM9N50I Datasheet
Additional preview pages of the HM9N50I datasheet.

HM9N50I Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

9A, 500V, RDS(on) = 0.95Ω @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D.
TO-252 TO-251 ◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Volt.

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Published: Jun 22, 2025 |