HM9N90 - 900V N-Channel MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM9N90
Manufacturer	H&M Semiconductor
File Size	332.28 KB
Description	900V N-Channel MOSFET
Datasheet	HM9N90 Datasheet
Additional preview pages of the HM9N90 datasheet.

HM9N90 Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

9.0A, 900V, RDS(on) = 1.40Ω @VGS = 10 V.
Low gate charge ( typical 45nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Aug 12, 2025 |