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HM9N90 - 900V N-Channel MOSFET

Product Overview

H&M Semiconductor

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HM9N90 900V N-Channel MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM9N90

Datasheet Details

Part number	HM9N90
Manufacturer	H&M Semiconductor
File Size	332.28 KB
Description	900V N-Channel MOSFET
Datasheet	HM9N90 Datasheet
Additional preview pages of the HM9N90 datasheet.

Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

Features

9.0A, 900V, RDS(on) = 1.40Ω @VGS = 10 V.
Low gate charge ( typical 45nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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Published: Aug 12, 2025 |