HM9N90 Datasheet 900V N-Channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM9N90 HM9N90 900V N-Channel MOSFET General.

HM9N90 900v n-channel mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM9N90
Manufacturer	H&M Semiconductor
File Size	332.28 KB
Description	900V N-Channel MOSFET
Download	HM9N90 Download (PDF)

General Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology.

Key Features

9.0A, 900V, RDS(on) = 1.40Ω @VGS = 10 V.
Low gate charge ( typical 45nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2).

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