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HMM35N120T - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • SiC MOSFET technology.
  • High blocking voltage with low On-resistance.
  • High speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr).
  • Halogen free, RoHS compliant Benefits.
  • Higher system efficiency.
  • Reduced cooling requirements.
  • Increased power density.
  • Increased system switching frequency.

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Datasheet preview – HMM35N120T

Datasheet Details

Part number HMM35N120T
Manufacturer H&M Semiconductor
File Size 1.23 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet HMM35N120T Datasheet
Additional preview pages of the HMM35N120T datasheet.

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Full PDF Text Transcription

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HMM35N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee HMM35N120T Silicon Carbide Power MOSFET N-Channel Enhancement Mode Package VDS ID @ 25˚C RDS(on) 1200 V 32 A 75 mΩ Features • SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Power Supplies Ordering Part Number HMM35N120T HMM35N120T-A Package Marking TO 247-3 HMM35N120T XXXX TO 247-3 HMM35N120T-A XXXX TJ , Tstg R
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