HMM35N120T Datasheet Silicon Carbide Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMM35N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee HMM35N120T Silicon Carbide Power MOSFET N-Channel Enhancement Mode Package VDS ID @ 25˚C RDS(on) 1200 V 32 A 75.

Datasheet Details

Part number	HMM35N120T
Manufacturer	H&M Semiconductor
File Size	1.23 MB
Description	Silicon Carbide Power MOSFET
Datasheet	HMM35N120T-HMSemiconductor.pdf

Key Features

SiC MOSFET technology.
High blocking voltage with low On-resistance.
High speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant Benefits.
Higher system efficiency.
Reduced cooling requirements.
Increased power density.
Increased system switching frequency.

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