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HMM65N120T Datasheet Silicon Carbide Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMM65N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt.

Key Features

  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.
  • Increase system switching frequency.

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