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HMM65N120T - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • 3rd generation SiC MOSFET technology.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.
  • Reduce cooling requirements.
  • Increase power density.
  • Increase system switching frequency.

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Datasheet Details

Part number HMM65N120T
Manufacturer H&M Semiconductor
File Size 874.52 KB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet HMM65N120T Datasheet
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HMM65N120T Silicon Carbide Power MOSFET N-cNh-acnhnanenl eElnEhnahnacnecmemeennt tMMooddee Features • 3rd generation SiC MOSFET technology • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies VD S 12 00 V ID @ 25˚C 63 A RDS(on) 32 mΩ TO-247-3 Package Part Number HMM65N120T Package TO 247-3 Marking HMM65N120T XXXX Maximum Ratings (TC = 25 ˚C unless otherwi
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