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HMM60N120T
Silicon Carbide Power MOSFET N-channel Enhancement Mode
Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drives • Pulsed Power Applications
Part Number +0017
Package 72
Marking +0017;;;;
VDS ID @ 25˚C RDS(on)
1200 V 55 A 40 mΩ
G D S
TO-247-3
Package
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax VG
HMM60N120T Datasheet
