HMS180N06A - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS180N06A
Manufacturer	H&M Semiconductor
File Size	623.94 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS180N06A Datasheet
Additional preview pages of the HMS180N06A datasheet.

The HMS180N06A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =60V,ID =120A RDS(ON) = 2.1mΩ (Typ) @ VGS=10V (Typ:3.5mΩ) RDS(ON) = 3.6mΩ (Typ) @ VGS=4.5V (Typ:4.0mΩ).
Excellent gate charge x RDS(on) product.
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested Schematic diagram HMS180N06A Marking and pin assignment.

Other Datasheets by H&M Semiconductor

Published: Jun 22, 2025 |