HMS18N10D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS18N10D N-Channel Enhancement Mode Power MOSFET.

Datasheet Details

Part number	HMS18N10D
Manufacturer	H&M Semiconductor
File Size	819.54 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HMS18N10D-HMSemiconductor.pdf

General Description

The HMS18N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

VDS =100V,ID =18A RDS(ON) < 23mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 33mΩ @ VGS=4.5V (Typ:80mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

HMS18N10D Distributor & Price

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