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HMS200N03D - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

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HMS200N03D N-Channel Super Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMS200N03D

Datasheet Details

Part number	HMS200N03D
Manufacturer	H&M Semiconductor
File Size	459.15 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS200N03D Datasheet
Additional preview pages of the HMS200N03D datasheet.

HMS200N03D Product details

Description

The HMS200N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =30V,ID =200A RDS(ON)=1.0mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jul 1, 2025 |