HMS20N15KA Datasheet N-Channel Super Trench Power MOSFET

Manufacturer: H&M Semiconductor

Datasheet Details

Part number	HMS20N15KA
Manufacturer	H&M Semiconductor
File Size	419.83 KB
Description	N-Channel Super Trench Power MOSFET
Download	HMS20N15KA Download (PDF)

The HMS20N15KA uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

N-Channel Super Trench Power MOSFET.

VDS =150V,ID =20A RDS(ON)=56mΩ (typical) @ VGS=10V RDS(ON)=68mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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