HMS20N25 Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: H&M Semiconductor

Datasheet Details

Part number	HMS20N25
Manufacturer	H&M Semiconductor
File Size	1.04 MB
Description	N-Channel Super Trench II Power MOSFET
Download	HMS20N25 Download (PDF)

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

HMS20N25, HMS20N25K N-Channel Super Trench II Power MOSFET.

VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS20N25 HMS20N25 TO-220 HMS20N25K HMS20N25K TO-252 Reel Size - Tape width - Quanti.

Part Number	Description
HMS20N25D	N-Channel Super Trench II Power MOSFET
HMS20N25K	N-Channel Super Trench II Power MOSFET
HMS20N15KA	N-Channel Super Trench Power MOSFET
HMS20N65D	650V 20A SJMOS N-MOSFET
HMS20N65D8	650V Super-Junction MOSFET
HMS20N65F	650V 20A SJMOS N-MOSFET
HMS20N65T	650V 20A SJMOS N-MOSFET
HMS20N70F	700V N-Channel Super Junction MOSFET
HMS20N70T	700V N-Channel Super Junction MOSFET
HMS20N80D	800V N-Channel Super Junction MOSFET