Datasheet4U Logo Datasheet4U.com

HMS20N25K Datasheet N-Channel Super Trench II Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS20N25, HMS20N25K N-Channel Super Trench II Power MOSFET.

Download the HMS20N25K datasheet PDF. This datasheet also includes the HMS20N25 variant, as both parts are published together in a single manufacturer document.

General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

  • VDS =250V,ID =80A RDS(ON)=89mΩ , typical (TO-220)@ VGS=10V RDS(ON)=89mΩ , typical (TO-252)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS20N25 HMS20N25 TO-220 HMS20N25K HMS20N25K TO-252 Reel Size - Tape width - Quanti.