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HMS320N04G - N-Channel Super Trench Power MOSFET

General Description

The HMS320N04G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =320A RDS(ON)=0.5mΩ , typical @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN5X6-8L D DDD D DDD S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS320N04G HMS320N04G DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratin.

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HMS320N04G N-Channel Super Trench Power MOSFET Description The HMS320N04G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =320A RDS(ON)=0.