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HMS32N65F - 650V N-Channel Super Junction MOSFET

Key Features

  • Very Low FOM (RDS(on) X Qg).
  • Extremely low switching loss.
  • Excellent stability and uniformity.
  • 100% Avalanche Tested.
  • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 32 99 75 Unit V A mΩ nC.

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HMS1) HMS1) 650V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent stability and uniformity • 100% Avalanche Tested • Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 32 99 75 Unit V A mΩ nC Application • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) • AC to DC Converters • Telecom, Solar Package & Internal Circuit TO-) SYMBOL Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM1) EAS2) IAR dv/dt dv/dt PD VESD(G-S) TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (TC = 25℃) Drain Current Drain Current - Continuous (TC = 100℃) - Pulsed