Datasheet4U Logo Datasheet4U.com

HMS330N10 - N-Channel Super Trench II Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =330A RDS(ON)=1.1mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.1mΩ , typical (TO-263)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS330N10 HMS330N10 TO-220 HMS330N10D HMS330N10D TO-263 Reel Size - Tape width -.

📥 Download Datasheet

Other Datasheets by H&M Semiconductor

Part Number Description
HMS330N10D N-Channel Super Trench II Power MOSFET
HMS330N06 N-Channel Super Trench II Power MOSFET
HMS330N06D N-Channel Super Trench II Power MOSFET
HMS310N85LL N-Channel Super Trench Power MOSFET
HMS320N04 N-Channel Super Trench II Power MOSFET
HMS320N04D N-Channel Super Trench II Power MOSFET
HMS320N04G N-Channel Super Trench Power MOSFET
HMS320N04LL N-Channel Super Trench Power MOSFET
HMS32N65F 650V N-Channel Super Junction MOSFET
HMS35N06D N-Channel Super Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HMS330N10, HMS330N10D N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =330A RDS(ON)=1.1mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.