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HMS35N20A - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

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HMS35N20A N-Channel Super Trench Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMS35N20A

Datasheet Details

Part number	HMS35N20A
Manufacturer	H&M Semiconductor
File Size	565.27 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS35N20A Datasheet
Additional preview pages of the HMS35N20A datasheet.

Product details

Description

The HMS35N20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Features

VDS =200V,ID =35A RDS(ON)=43mΩ (typical) @ VGS=10V RDS(ON)=50mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jun 22, 2025 |