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HM1404C - N-Channel Enhancement Mode Power MOSFET

General Description

The HM1404& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 40V,ID =170A RDS(ON) < 3.7mΩ @ VGS=10V (Typ:2.7mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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HM1404C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS = 40V,ID =170A RDS(ON) < 3.7mΩ @ VGS=10V (Typ:2.