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HM1404B - N-Channel Enhancement Mode MOSFET

General Description

  Switching Time Test Circuit and Waveforms +0% Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM1404B HM1404B TO-220-3L Reel Size - 1  

Key Features

  • VDSS=40V／VGSS=±20V／ID=130A RDS(ON)=4mΩ(max. )@VGS=10V.
  • High Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology.
  • High Density Cell Design For Ultra Low On-Resistance Applications.
  • Power Management in Inverter System.
  • Synchronous Rectification   Pin.

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Full PDF Text Transcription (Reference)

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+0% 40VDS／±20VGS／130A(ID) N-Channel Enha ncement Mode MOSFET Features  VDSS=40V／VGSS=±20V／ID=130A RDS(ON)=4mΩ(max.