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HM17N10K - N-Channel Power MOSFET

General Description

The +01.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram +01.

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+01. N-Channel Enhancement Mode Power MOSFET Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =17A RDS(ON) < 70mΩ @ VGS=10V (Typ:56mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram +01.