HM8810B - Dual N-Channel MOSFET

Product Overview

H&M semi

Part number	HM8810B
Manufacturer	H&M semi
File Size	661.45 KB
Description	Dual N-Channel MOSFET
Datasheet	HM8810B Datasheet
Additional preview pages of the HM8810B datasheet.

The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

📁 Similar Datasheet

HM8810A - Dual N-Channel MOSFET (VBsemi)
HM882 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM8002D - mono class AB audio power amplifier (H&M Semiconductor)
HM803 - Low-Power Microprocessor Power Monitoring and Reset Circuit (H&M Semiconductor)
HM809 - Low-Power Microprocessor Power Monitoring and Reset Circuit (H&M Semiconductor)
HM80N03 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM80N03KA - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM80N04K - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

Other Datasheets by H&M semi

Published: Jan 10, 2021 |