HM8810E - Dual N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment.

H&M semi

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Datasheet Details

Part number	HM8810E
Manufacturer	H&M semi
File Size	673.17 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM8810E Datasheet
Additional preview pages of the HM8810E datasheet.

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HM8810E Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.

Published: Apr 12, 2021 |