HM15N50 Datasheet | H&M Semiconductor

HM15N50/HM15N50F HM15N50/HM15N50F 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features - 15.0A, 500V, RDS(on) = 0.42Ω @VGS = 10 V - Low gate charge ( typical 45n C) - Fast s witching - 100% avalanche tested - Improved dv/dt capability {D TO-220 GD S TO-220F - ◀▲ {G - -...