HM15N50F Overview
Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.
Key Features
- 15.0A, 500V, RDS(on) = 0.42Ω @VGS = 10 V
- Low gate charge ( typical 45nC)
- Fast s witching
- 100% avalanche tested
- Improved dv/dt capability {D GDS TO-220 GD S TO-220F
