HM1P10MR datasheet by H&M Semiconductor.
| Part number | HM1P10MR |
|---|---|
| Datasheet | HM1P10MR-HMSemiconductor.pdf |
| File Size | 1.00 MB |
| Manufacturer | H&M Semiconductor |
| Description | -100V P-Channel Enhancement Mode MOSFET |
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The HM1P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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