Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.
General Features
- VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
S Schematic diagram
Marking and pin assignment
Application
- Battery applications
- Load switch
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-23-3L
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000...