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HM2319 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM2319 datasheet preview

Datasheet Details

Part number	HM2319
Manufacturer	H&M Semiconductor
File Size	317.46 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2319-HMSemiconductor.pdf

HM2319 Overview

The HM2319 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications.

HM2319 Key Features

VDS = -40V,ID = -A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Battery

More Datasheets from H&M Semiconductor

See all H&M Semiconductor datasheets

Part Number	Description
HM2319A	P-Channel Enhancement Mode Power MOSFET
HM2319D	P-Channel Enhancement Mode Power MOSFET
HM2319PR	P-Channel Enhancement Mode Power MOSFET
HM2310	N-Channel Enhancement Mode Power MOSFET
HM2310B	N-Channel Enhancement Mode Power MOSFET
HM2310C	N-Channel Enhancement Mode Power MOSFET
HM2310DR	N-Channel Enhancement Mode Power MOSFET
HM2310PR	N-Channel Enhancement Mode Power MOSFET
HM2312	N-Channel Enhancement Mode Power MOSFET
HM2312B	N-Channel Enhancement Mode Power MOSFET

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