• Part: HM2319PR
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 555.08 KB
Download HM2319PR Datasheet PDF
H&M Semiconductor
HM2319PR
Description The HM2319PR uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. General Features - VDS = -40V,ID = -6.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V - High power and current handing capability - Lead free product is acquired - Surface mount package Application - Battery applications - Load switch S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package SOT89-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit -40 ±20 -6.0 -18 2.0 -55 To 150 Unit V V A A W ℃ Thermal...