Datasheet Summary
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100VDS／±20VGS／2.7A(ID) N-Channel Enhancement Mode MOSFET
Features
- VDSS=1 00V／VGSS=±20V／ID=2.7A
RDS(ON)=180mΩ(Max.)@VGS=10V RDS(ON)=240mΩ(Max.)@VGS=4.5V
- ESDprotect
- Reliable and Rugged
- High Density Cell Design For Ultra Low
On-Resistance
Applications z Synchronous Rectification z Power Management in Inverter System
Switching Time Test Circuit and Waveforms
PinDescription
Marking and pin Assignment
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Marking and pin Assignment
SOT-23 -3L top view
Package Marking and Ordering Information
Device Marking +0
Device +0
Device Package...