Datasheet Summary
100V N Channel Enhancement Mode MOSFET 100 V N 沟道增强型 MOS 管
VDS= 100V RDS(ON), Vgs@10V, Ids@1.0A = 270m Ω RDS(ON), Vgs@4.5V, Ids@0.5A = 340m Ω
Features
特性 Advanced trench process technology 高级的加工技术 High Density Cell Design For Ultra Low OnResistance
极低的导通电阻高密度的单元设计
Improved ShootThrough FOM 改进的成型工艺 Package Dimensions 封装尺寸及外形图
Package Dimensions 封装尺寸及外形图
Marking D
SOT-23(PACKAGE)
REF.
A B C D E
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0.45 0.55
REF.
G H K J L
Millimeter
Min.
Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC...