HM250N03GA Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM250N03GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V ,ID =250A RDS(ON) = 0.9mΩ (Typ) @ VGS=10V RDS(ON) = 1.8mΩ (Typ) @ VGS=4.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ΔVds TESTED! DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size - Tape width - Quantity -...