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HM25N06D Datasheet

MOSFET

Manufacturer: H&M Semiconductor

HM25N06D Overview

The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM25N06D Key Features

  • VDS >60V,ID =25A
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Low gate to drain charge to reduce switching losses
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply

HM25N06D Distributor