HM25N06Q
HM25N06Q is MOSFET manufactured by H&M Semiconductor.
Description
The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS >60V,ID =25A
RDS(ON) < 20mΩ @ VGS=10V
（Typ:18mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3X3-8L
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