HM25N06Q Overview
The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM25N06Q Key Features
- VDS >60V,ID =25A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply