HM2N20PR
Description
The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
S Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOT-89-3L
Reel Size
Tape width
- Quantity
- Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
Operating...
