HM2N20MR Datasheet | H&M Semiconductor

200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 200V,ID =2A RDS(ON) < 1800mΩ @ VGS=10V (Typ:1400mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply 2N20 Package Marking and Ordering Information Product ID Pack Marking SOT23-3 2N20 Qty(PCS)...