HM2N25MR Description
The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- Part: HM2N25MR
- Manufacturer: H&M Semiconductor
- Size: 946.40 KB
Related H&M Semiconductor Datasheets
| Part Number | Description |
|---|---|
| HM2N20 | N-Channel Enhancement Mode Power MOSFET |
| HM2N20MR | 200V N-Channel Enhancement Mode MOSFET |
| HM2N20PR | N-Channel Enhancement Mode Power MOSFET |
| HM2N20R | N-Channel Enhancement Mode Power MOSFET |
| HM2N10 | N-Channel Enhancement Mode Power MOSFET |