HM2N25MR
HM2N25MR is 250V N-Channel Enhancement Mode MOSFET manufactured by H&M Semiconductor.
250V N-Channel Enhancement Mode MOSFET
Description
The HM2N25MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
VDS = 250V,ID =2A RDS(ON) < 1500mΩ @ VGS=10V (Typ:1300mΩ)
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Application
Power switching application Hard switched and high frequency circuits Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT23-3
Qty(PCS)...
