HM30N04D Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =40V,ID =0A RDS(ON) <13mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram DDDD DDDD Application - Load switching - Hard switched and high frequency circuits - Uninterruptible power supply SSSG GSSS ')1;/ top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package ')1;/ Reel Size - Tape width -...