HM30N10K Datasheet | H&M Semiconductor

+01. N-Channel Enhancement Mode Power MOSFET Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID =30A RDS(ON) < 31mΩ @ VGS=10V (Typ:27mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram +01. Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 -2Ltop view Package Marking and Ordering Information Device Marking Device Device Package +01. +01. TO-252-2L...