HM30N10D Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 100V,ID =30A RDS(ON) < 16mΩ @ VGS=10V (Typ:24mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram Marking and pin assignment DFN5X6-8L top view Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size - Tape width - Quantity -...