• Part: HM30P02K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 662.57 KB
Download HM30P02K Datasheet PDF
H&M Semiconductor
HM30P02K
Description The +03. uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -30A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ VGS=-2.5V - High power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Motor drive - Load switch - Power management S Schematic diagram +03. Marking and pin Assignment TO-252-2L top view Package Marking And Ordering Information Device Marking Device Device Package HM3. +03. 72/ Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature...