• Part: HM30P06D
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 581.81 KB
Download HM30P06D Datasheet PDF
H&M Semiconductor
HM30P06D
Description The HM30P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-30A RDS(ON) <19.5mΩ @ VGS=-10V RDS(ON) <21.5mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Load switch 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating...