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HM30P06D

Manufacturer: H&M Semiconductor

HM30P06D datasheet by H&M Semiconductor.

HM30P06D datasheet preview

HM30P06D Datasheet Details

Part number HM30P06D
Datasheet HM30P06D-HMSemiconductor.pdf
File Size 581.81 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM30P06D page 2 HM30P06D page 3

HM30P06D Overview

The HM30P06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM30P06D Key Features

  • VDS =-60V,ID =-30A RDS(ON) <19.5mΩ @ VGS=-10V RDS(ON) <21.5mΩ @ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load switch
  • Tape width
  • Quantity
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