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HM30P03Q Datasheet P-channel Enhancement Mode MOSFET

Manufacturer: H&M Semiconductor

Overview: HM30P03Q -30VDS／±20VGS／-30A(ID) P-Channel Enha ncement Mode MOSFET.

General Description

Marking and pin Assignment Markin g and pin assignment Package Marking and Ordering Information Device Marking Device Device Package HM34 +034   ')1;/ Reel Size - Tape width - Quantity -     HM30P03Q -30VDS／±20VGS／-30A(ID) P-Channel Enha ncement Mode MOSFET Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250uA IDSS Zero Gate Voltage Drain Current VDS=-24V,VGS=0V TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250uA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(on) Drain-Source On-Resistance VGS=-10V, ID=-30A VGS=-4.5V, ID=-21A Min.

-30 -1 Typ -1.65 Max.

Unit V 1 30 uA -3 V ±100 nA 14 22 mΩ VSD Diode Forward Voltage RG Gate Resistance ISD=-8A,VGS=0V VGS=0V, VDS=0V, Frequency=1MHz Note: 1: Pulse test ;

Key Features

  • VDSS=-30V／VGSS=±20V／ID=-30A RDS(ON)=14mΩ(max. )@VGS=-10V RDS(ON)=22mΩ(max. )@VGS=-4.5V.
  • Low Dense Cell Design.
  • Reliable and Rugged.
  • Advanced trench process technology.

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