HM30P03Q Description
pulse width ≦ 300ns, duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. -1.3 V 6 Ω HM30P03Q -30VDS／±20VGS／-30A(ID) P-Channel Enha ncement Mode MOSFET.
HM30P03Q Key Features
- VDSS=-30V／VGSS=±20V／ID=-30A RDS(ON)=14mΩ(max.)@VGS=-10V RDS(ON)=22mΩ(max.)@VGS=-4.5V
- Low Dense Cell Design
- Reliable and Rugged
- Advanced trench process technology