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HM3205B Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM3205B N-Channel Enhancement Mode Power MOSFET.

General Description

The HM3205B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

GENERAL

Key Features

  • VDS =55V,ID =105A RDS(ON) < 6.0mΩ @ VGS=10V (Typ:5.0mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability H&M SEMI HM3205B.

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HM3205B Distributor