Part HM3801D
Description P-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer H&M Semiconductor
Size 677.11 KB
H&M Semiconductor

HM3801D Overview

Description

The HM3801D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -30V,ID = -4.6A RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package