HM3808 Overview
Key Features
- VDSS=80V／VGSS=±25V／ID=150A RDS(ON)=5mΩ(max.)@VGS=10V
- Low Dense Cell Design
- Reliable and Rugged
- Advanced trench process technology
| Part | HM3808 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | H&M Semiconductor |
| Size | 928.67 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |