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HM40N25F Datasheet 250v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM40N25 / HM40N25F HM40N25 / HM40N25F 250V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 40A, 250V, RDS(on) typ. = 0.079Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HM40N25 HM40N25F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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HM40N25F Distributor