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HM4444 Datasheet

Manufacturer: H&M Semiconductor
HM4444 datasheet preview

HM4444 Details

Part number HM4444
Datasheet HM4444-HMSemiconductor.pdf
File Size 534.88 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM4444 page 2 HM4444 page 3

HM4444 Overview

The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM4444 Key Features

  • VDS =80V,ID =12.5A RDS(ON) < 16mΩ @ VGS=10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width

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