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HM4449 Datasheet

Manufacturer: H&M Semiconductor
HM4449 datasheet preview

HM4449 Details

Part number HM4449
Datasheet HM4449-HMSemiconductor.pdf
File Size 464.12 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM4449 page 2 HM4449 page 3

HM4449 Overview

The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.

HM4449 Key Features

  • VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface mount package

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