HM4441A Overview
HM4441A N Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where...
HM4441A Key Features
- 60V/-6.0A, RDS(ON) = 55mΩ (Typ.) @VGS =-10V
- 60V/-5.0A, RDS(ON) = 73mΩ @VGS = -4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design PART MARKING SOP-8 Y<： Year Code ::： Date Code HM4441A N Channel Enhancement Mode MO